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US5U2
Transistors
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Symbol
V RM
V R
I F
Limits
30
20
0.5
Unit
V
V
A
Forward current surge peak
Power dissipation
Junction temperature
I FSM
P D
Tj
? 1
? 2
2.0
0.5
150
A
W / ELEMENT
° C
? 1 60Hz 1cycle
? 2 Mounted on ceramic board
<MOSFET and Di>
Parameter
Total power dissipation
Range of storage temperature
Symbol
P D ? 1
Tstg
Limits
1.0
? 55 to + 150
Unit
W / TOTAL
° C
? 1 Mounted on a ceramic board
Electrical characteristics (Ta=25 ° C)
<MOSFET>
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
10
Unit
μ A
Conditions
V GS =20V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
30
?
?
V
I D = 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
1.0
?
?
?
?
?
170
250
270
1
2.5
240
350
380
μ A
V
m ?
m ?
m ?
V DS = 30V, V GS =0V
V DS = 10V, I D = 1mA
I D = 1.4A, V GS = 10V
I D = 1.4A, V GS = 4.5V
I D = 1.4A, V GS = 4V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
?
?
?
?
?
1.0
?
?
?
?
?
?
?
?
70
15
12
6
6
13
8
?
?
?
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = 10V, I D = 1.4A
V DS = 10V
V GS =0V
f=1MHz
V DD 15V
I D = 0.7A
V GS = 10V
R L = 21 ?
R G =10 ?
Total gate charge
Q g
?
?
1.4
2.0
nC
V DD
15V, V GS = 5V
Gate-source charge
Gate-drain charge
Q gs
Q gd
?
?
?
?
0.6
0.3
?
?
nC
nC
I D = 1.4A
R L = 11 ?, R G = 10 ?
? Pulsed
<Body diode characteristics (source-drain)>
Parameter
Forward voltage
Symbol
V SD
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 0.6A, V GS =0V
<Di>
Parameter
Forward voltage
Reverse current
Symbol
V F
I R
Min.
?
?
?
Typ.
?
?
?
Max.
0.36
0.47
100
Unit
V
V
μ A
I F = 0.1A
I F 0.5A
V R = 20V
Conditions
Rev.B
2/4
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